Design and Evaluation of a Hall Sensor with Different Hall Plate Geometries in a 0.5µm CMOS Process
DOI:
https://doi.org/10.37537/rev.elektron.1.1.5.2017Palavras-chave:
Hall Plate, CMOS design, Solid state magnetic field sensor.Resumo
An integrated Hall sensor was designed and fabricated in a 0.5μm CMOS ONC5N/F process provided by MOSIS. On it, four different Hall Plate geometries were integrated in order to analyze their sensitivity and resistance over temperature from -40°C up to 165°C. Furthermore, an amplifier and a current spinning system to remove the amplifier and Hall Plate offset were designed and placed in the same chip. The results show a better sensitivity performance in the cross-shaped Hall Plate and a linear behavior of the sensor in the range of operation tested.
Downloads
Referências
E. H. Hall, “On a new action of the magnet on electric currents”, American Journal of Mathematics, vol. 2, np. 3, 1879, pp. 287-292.
R. S. Popovic,Hall effect devices. Philadelphia, PA: CRC Press, 2003.
W. Versnel, “The geometrical correction factor for a rectangular Hall Plate”, Journal of Applied Physics, vol. 53, np. 7, 1982, pp. 4980-4986.
W. Versnel, “Analysis of symmetrical Hall Plates with finite contacts”, Journal of Applied Physics, vol. 52, np. 7, 1981, pp. 4659-4666.
A. A. Bellekom, “Origins of offset in conventional and spinning-current Hall plates”, Ph.D. dissertation, Dept. Elect. Eng., Delft Univ. of Technology, Delft, Netherlands,1998.
A. Bilotti, G. Monreal, R. Vig, “Monolithic magnetic Hall sensor using dynamic quadrature offset cancellation”, IEEE journal of solid-state circuits, vol. 32, np. 6, 1997, pp. 829-836.
N. Ronis, M. Garcia-Inza “Design and Characterization of Hall Plates in a 0.5µm CMOS Process”, Micro-Nanoelectronics, Technology and Applications (EAMTA), Neuquén, Argentina, 2016.
N. D. Arora, J. R. Hauser, D. J. Roulston, “Electron and hole mobilities in silicon as a function of concentration and temperature”, IEEE Transactions on Electron Devices,vol. 29, np. 2, 1982, pp. 292-295.
E. Ohta, M. Sakata, “Temperature dependence of Hall factor in low-compensated n-type silicon”, Japanese Journal of Applied Physics, vol. 17, np. 10, 1978, p. 1795.
Downloads
Publicado
Edição
Seção
Licença
Os autores que publicam nesta revista concordam com os termos estabelecidos em Creative Commons Atribución/Reconocimiento-NoComercial-SinDerivados 4.0 Licencia Pública Internacional — CC BY-NC-ND 4.0.
