Modelización numérica de la pérdida de carga inducida por radiación en celdas CMOS de puerta flotante

Lucas Sambuco Salomone, Mariano Garcia-Inza, Sebastián Carbonetto, Adrián Faigón

Resumen


Mediante un modelo numérico desarrollado recientemente y basado en principios físicos, se estudia la respuesta a la radiación de celdas de compuerta flotante programadas/borradas. El rol que juega la captura de carga en los óxidos en el desplazamiento total de la tensión umbral con la dosis es debidamente evaluado a través de la variación de la tasa de captura de los huecos generados por radiación. Se considera un modelo analítico simplificado y se discuten sus limitaciones.

Palabras clave


efectos de radiación; celdas de puerta flotante; modelización numérica

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Referencias


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DOI: https://doi.org/10.37537/rev.elektron.5.2.136.2021

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